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| Power Transistors 2SD1771, 2SD1771A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1191 and 2SB1191A 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 10.00.3 s Features 2.0 1.50.1 1.5max. 1.1max. q q q High collector to emitter VCEO Large collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings 200 200 150 180 6 2 1 25 1.3 150 -55 to +150 Unit 10.5min. 0.80.1 0.5max. 2.540.3 5.080.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1771 2SD1771A 2SD1771 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.40.3 1.00.1 8.50.2 V 10.00.3 6.00.3 1.5-0.4 2.0 Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature A A 4.40.5 0.80.1 2.540.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.080.5 W 1 2 3 C C 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1771 2SD1771A (TC=25C) Symbol ICBO IEBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT Cob * Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 5mA, IB = 0 IE = 0.5mA, IC = 0 VCE = 10V, IC = 100mA VCE = 10V, IC = 300mA VCE = 10V, IC = 300mA IC = 500mA, IB = 50mA VCE = 10V, IC = 100mA, f = 1MHz VCB = 10V, IE = 0, f = 1MHz min typ max 50 50 4.40.5 Emitter to base voltage V 3.0-0.2 +0.4 emitter voltage 2SD1771A Unit A A V V 150 180 6 60 50 1 1 20 27 240 Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE1 V V MHz pF Rank classification Q 60 to 140 P 100 to 240 Rank hFE1 14.70.5 V +0 1 Power Transistors PC -- Ta 40 1.6 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) (1) 20 15 10 5 0 0 20 40 60 80 100 120 140 160 (2) (3) 0 0 4 8 12 16 20 24 TC=25C 1.4 IB=20mA 2SD1771, 2SD1771A IC -- VCE 4 VCE=10V IC -- VBE Collector power dissipation PC (W) 35 30 25 Collector current IC (A) 1.2 1.0 10mA 0.8 0.6 4mA 0.4 2mA 0.2 1mA 8mA 6mA Collector current IC (A) 3 25C 2 TC=100C -25C 1 0 0 0.4 0.8 1.2 1.6 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 1000 hFE -- IC 1000 VCE=10V fT -- IC VCE=10V f=1MHz TC=25C Forward current transfer ratio hFE 3 TC=100C 300 TC=100C 25C Transition frequency fT (MHz) 0.3 1 3 300 100 30 10 3 1 0.3 0.1 0.01 0.03 1 100 -25C 0.3 25C -25C 30 0.1 10 0.03 3 0.01 0.01 0.03 0.1 0.3 1 3 1 0.01 0.03 0.1 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 102 Non repetitive pulse TC=25C (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink Rth(t) -- t (1) Thermal resistance Rth(t) (C/W) (2) 10 Collector current IC (A) 10 3 ICP 1 0.3 1ms 0.1 0.03 0.01 1 3 10 10ms IC 300ms t=0.5ms 1 10-1 2SD1771A 2SD1771 30 100 300 1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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